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	Origin of the low thermal conductivity of the thermoelectric material beta-zn4sb3: an ab initio theoretical study
	Chen, Weibing; Li, Jingbo
刊名	Applied physics letters
	2011-06-13
卷号	98期号:24页码:3
ISSN号	0003-6951
DOI	10.1063/1.3599483
通讯作者	Chen, weibing()
英文摘要	By modeling beta-zn4sb3 material as a zn36sb30 crystal with defects, the crystal structure and thermal properties of beta-zn4sb3 are studied by ab initio method to explain its extremely low thermal conductivity at moderate temperature. the formation and migration energies of defects are calculated and used to explain the partial occupation of zn at the lattice sites, the disordered local structures and the origin of the low thermal conductivity of beta-zn4sb3. our study also unravels the puzzling dependence of thermal conductivity on doping in beta-zn4sb3. a doping strategy is proposed to improve the thermoelectric performance of beta-zn4sb3. (c) 2011 american institute of physics. [doi:10.1063/1.3599483]
WOS关键词	PHONON-GLASS ; INTERSTITIAL ZN ; ZN4SB3 ; ENERGY ; ZINC
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000291803600018
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428233
专题	半导体研究所
通讯作者	Chen, Weibing
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Chen, Weibing,Li, Jingbo. Origin of the low thermal conductivity of the thermoelectric material beta-zn4sb3: an ab initio theoretical study[J]. Applied physics letters,2011,98(24):3.
APA	Chen, Weibing,&Li, Jingbo.(2011).Origin of the low thermal conductivity of the thermoelectric material beta-zn4sb3: an ab initio theoretical study.Applied physics letters,98(24),3.
MLA	Chen, Weibing,et al."Origin of the low thermal conductivity of the thermoelectric material beta-zn4sb3: an ab initio theoretical study".Applied physics letters 98.24(2011):3.

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