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	Photoluminescence properties and energy level of re (re = pr, sm, tb, er, dy) in y4si2o7n2
	Wang, Guo-Jun1; Pan, Dong-Jie1; Xu, Tao1; Xiang, Guang-Xin1; Zhang, Zhi-Jun1; Hintzen, Hubertus T.2; Zhao, Jing-Tai1; Huang, Yan3
刊名	Journal of alloys and compounds
	2017-06-25
卷号	708页码:154-161
关键词	Photoluminescence Y4si2o7n2 Energy level Re3+-activate Silicon-oxynitride
ISSN号	0925-8388
DOI	10.1016/j.jallcom.2017.02.298
通讯作者	Zhang, zhi-jun(zhangzhijun@shu.edu.cn)
英文摘要	Re3+ (re = pr, sm, tb, er, dy)-activated y4si2o7n2 samples were prepared by a solid-state reaction method at high temperature, and their photoluminescence properties were investigated. the absorption band located at about 250 nm is attributed to the host absorption. the 5d bands of pr3+ and tb3+ are at rather low energy in y4si2o7n2 compared to oxide. the direct pr3+ 4f(2) -> 4f(1)5d(1) excitation at 275 nm leads to typical 4f(2) -> 4f(2) line emissions (450-700 nm) and strong 4f(1)5d(1) -> 4f(2) broad band emission (300-450 nm), respectively. the charge transfer (n3- -> sm3+) band of sm3+ was observed at a somewhat lower energy of 4.68 ev compared to oxide, and sm3+-activated sample shows a bright red emission originating from (4)g(5/2) -> h-6(j) (j = 5/2, 7/2 and 9/2) transitions. for tb3+-doped sample, the direct tb3+ 4f(8) -> 4f(7)5d(1) excitation leads to d-5(3) -> f-7(j) (j = 6, 5, 4, 3) (blue) and d-5(4) -> f-7(j) (j = 6, 5, 4, 3) (green) line emissions, the cross-relaxation depended on tb concentration has happened. the incorporation of er3+ (or dy3+) into y4si2o7n2 resulted in a typical er3+ (or dy3+) f-f line absorptions and emissions. moreover, the energy transfer from the host lattice to the luminescent activators (pr3+, tb3+ and sm3+) is observed. the energy level diagram containing the position of 4f and 5d energy levels of all ln(2+) and ln(3+) ions relative to the valence and conduction band of y4si2o7n2 has been established and studied based on the data presented in this work, and further provides a platform for studying the photoluminescence properties as well as the valence stability of the lanthanide ions. (c) 2017 published by elsevier b. v.
WOS关键词	LUMINESCENCE PROPERTIES ; CRYSTAL-STRUCTURE ; WHITE LEDS ; PHOSPHORS ; CE3+ ; LANTHANIDES ; DISCOVERY ; POSITIONS ; EMISSION ; MELILITE
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
语种	英语
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000400713300021
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2177194
专题	高能物理研究所
通讯作者	Zhang, Zhi-Jun
作者单位	1.Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China 2.Delft Univ Technol, Luminescent Mat Res Grp, Mekelweg 15, NL-2629 JB Delft, Netherlands 3.Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China
推荐引用方式 GB/T 7714	Wang, Guo-Jun,Pan, Dong-Jie,Xu, Tao,et al. Photoluminescence properties and energy level of re (re = pr, sm, tb, er, dy) in y4si2o7n2[J]. Journal of alloys and compounds,2017,708:154-161.
APA	Wang, Guo-Jun.,Pan, Dong-Jie.,Xu, Tao.,Xiang, Guang-Xin.,Zhang, Zhi-Jun.,...&Huang, Yan.(2017).Photoluminescence properties and energy level of re (re = pr, sm, tb, er, dy) in y4si2o7n2.Journal of alloys and compounds,708,154-161.
MLA	Wang, Guo-Jun,et al."Photoluminescence properties and energy level of re (re = pr, sm, tb, er, dy) in y4si2o7n2".Journal of alloys and compounds 708(2017):154-161.

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