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	Enhanced Stability in Zr-Doped ZnO TFTs With Minor Influence on Mobility by Atomic Layer Deposition
	Yang, Jun[1]; Zhang, Yongpeng[2]; Qin, Cunping[3]; Ding, Xingwei[4]; Zhang, Jianhua[5]
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2019
卷号	66页码:1760-1765
关键词	Atomic layer deposition (ALD) oxygen defects temperature stability Zr-doped ZnO (ZrZnO) thin-film transistors (TFTs)
ISSN号	0018-9383
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2162038
专题	上海大学
作者单位	1.[1]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 2.Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 3.[2]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 4.Shanghai Univ, Sch Mechatron & Automat, Shanghai 200072, Peoples R China. 5.[3]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 6.Shanghai Univ, Sch Mechatron & Automat, Shanghai 200072, Peoples R China. 7.[4]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 8.Shanghai Univ, Sch Mechatron & Automat, Shanghai 200072, Peoples R China. 9.[5]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 10.Shanghai Univ, Sch Mechatron & Automat, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Yang, Jun[1],Zhang, Yongpeng[2],Qin, Cunping[3],et al. Enhanced Stability in Zr-Doped ZnO TFTs With Minor Influence on Mobility by Atomic Layer Deposition[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2019,66:1760-1765.
APA	Yang, Jun[1],Zhang, Yongpeng[2],Qin, Cunping[3],Ding, Xingwei[4],&Zhang, Jianhua[5].(2019).Enhanced Stability in Zr-Doped ZnO TFTs With Minor Influence on Mobility by Atomic Layer Deposition.IEEE TRANSACTIONS ON ELECTRON DEVICES,66,1760-1765.
MLA	Yang, Jun[1],et al."Enhanced Stability in Zr-Doped ZnO TFTs With Minor Influence on Mobility by Atomic Layer Deposition".IEEE TRANSACTIONS ON ELECTRON DEVICES 66(2019):1760-1765.

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