Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy

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	Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy
	Su SJ ; Wang W ; Zhang GZ ; Hu WX ; Bai AQ ; Xue CL ; Zuo YH ; Cheng BW ; Wang QM
刊名	acta physica sinica
	2011
卷号	60 期号:2 页码:article no.28101
关键词	GeSn Ge molecular beam epitaxy epitaxial growth SEMICONDUCTORS GE(001)2X1
ISSN号	1000-3290
通讯作者	cheng, bw, chinese acad sci, state key lab integrated optoelect, inst semicond, beijing 100083, peoples r china. cbw@red.semi.ac.cn
学科主题	光电子学
收录类别	SCI
资助信息	national basic research program of china [2007cb613404]; national natural science foundation of china [61036003, 60906035, 51072194]; chinese academy of sciences, china [iscas2009t01]
语种	中文
公开日期	2011-07-05 ; 2011-07-15
附注	ge0.975sn0.025 alloy films have been grown on si(001) substrates by molecular beam epitaxy with high-quality ge films as buffer layers. the alloys have high crystalline quality without sn surface segregation, determined by double crystal x-ray diffraction and rutherford backscattering spectra measurement. in addition, the ge0.975sn0.025 alloy has rather good thermal stability at 500 degrees c, which makes it possible to be used in si-based optoelectronic devices.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21003]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Su SJ,Wang W,Zhang GZ,et al. Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy[J]. acta physica sinica,2011,60(2):article no.28101.
APA	Su SJ.,Wang W.,Zhang GZ.,Hu WX.,Bai AQ.,...&Wang QM.(2011).Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy.acta physica sinica,60(2),article no.28101.
MLA	Su SJ,et al."Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy".acta physica sinica 60.2(2011):article no.28101.