Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates

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	Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates
	Su SJ ; Wang W ; Cheng BW ; Zhang GZ ; Hu WX ; Xue CL ; Zuo YH ; Wang QM
刊名	journal of crystal growth
	2011
卷号	317 期号:1 页码:43-46
关键词	Thermal stability Molecular beam epitaxy Germanium tin alloys Germanium MOLECULAR-BEAM EPITAXY LOW-TEMPERATURE SEMICONDUCTORS GE(001)2X1
ISSN号	0022-0248
通讯作者	cheng, bw, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. cbw@semi.ac.cn
学科主题	光电子学
收录类别	SCI
资助信息	national basic research program of china [2007cb613404]; national natural science foundation of china [60906035, 61036003, 51072194]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	single-crystal ge1-xsnx alloys (x=0.025, 0.052, and 0.078) with diamond cubic structure have been grown on si(0 0 1) substrates by molecular beam epitaxy (mbe), using high-quality ge thin films as buffer layers. the ge1-xsnx alloys are nearly fully strained and have high crystalline quality without sn surface segregation, revealed by the measurements of high resolution x-ray diffraction (hrxrd). rutherford backscattering spectra (rbs), and transmission electron microscopy (tem). in addition, thermal stability investigations show that the alloy with sn composition of about 2.5% can be stable at 500 degrees c, which may enable it for device applications. (c) 2011 elsevier b.v. all rights reserved.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20983]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Su SJ,Wang W,Cheng BW,et al. Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates[J]. journal of crystal growth,2011,317(1):43-46.
APA	Su SJ.,Wang W.,Cheng BW.,Zhang GZ.,Hu WX.,...&Wang QM.(2011).Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates.journal of crystal growth,317(1),43-46.
MLA	Su SJ,et al."Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates".journal of crystal growth 317.1(2011):43-46.