MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers

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	MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
	Jia CH; Song HP
刊名	journal of crystal growth
	2011
卷号	319 期号:1 页码:114-117
关键词	Anisotropy Crystal morphology Metalorganic chemical vapor deposition a-Plane InN INDIUM NITRIDE MOVPE GROWTH CUBIC INN SAPPHIRE GAN MBE
ISSN号	0022-0248
通讯作者	zhang, ba, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. zhangbiao@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	national science foundation of china [60776015]; special funds for major state basic research project (973 program) of china [2006cb604907]; 863 high technology r&d program of china [2007aa03z402, 2007aa03z451]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	inn films have been grown on (1 -1 0 2) r-plane al2o3 substrates by metalorganic chemical vapor deposition with gan buffer, with gan and low-temperature (lt) inn buffers, and without any buffer layer. it is found that all of the samples are in the non-polar (1 1 -20) a-plane and an increase in the growth temperature of gan buffer to about 800 degrees c can improve the crystal quality of the inn films as compared to the film grown on gan buffer at 550 degrees c, while 550 degrees c is the usual gan buffer growth temperature in c-plane inn growth. surface morphologies of the films show a stripe-like pattern. introducing gan buffer can reduce the anisotropy of the full-width at half-maximum of x-ray (11 -2 0) rocking curves along different directions in plane. the added lt-inn layer cannot improve the morphology and the crystallography of a-plane inn, but it can increase the intensity of photoluminescence (pl) spectrum remarkably and make about 10 mev blueshift as to the sample with only gan buffer. the pl measurements reveal that the inn films have a fundamental band gap of about 0.75 ev. (c) 2011 elsevier b.v. all rights reserved.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21261]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Jia CH,Song HP. MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers[J]. journal of crystal growth,2011,319(1):114-117.
APA	Jia CH,&Song HP.(2011).MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers.journal of crystal growth,319(1),114-117.
MLA	Jia CH,et al."MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers".journal of crystal growth 319.1(2011):114-117.