Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy

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	Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy
	Yang T; Yang XG; Wang KF
刊名	semiconductor science and technology
	2011
卷号	26 期号:7 页码:article no.75010
关键词	HIGH-DENSITY TEMPERATURE-DEPENDENCE SELF-FORMATION LAYERS WELL MBE
ISSN号	0268-1242
通讯作者	yang, xg, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. tyang@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	chinese academy of sciences ; national science foundation of china [60876033, 61076050, 61021003]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	in this paper we discuss the fabrication of high-density inas quantum dots (qds) on gaas (1 0 0) substrates by molecular beam epitaxy, via antimony surfactant-mediated growth. the structural and optical properties of the qds were studied as a function of the amount of antimony irradiation. it was found that with appropriate antimony irradiation, the dot density significantly increases while simultaneously restraining giant qds. however, when the irradiation is beyond a certain amount, the dot density inversely decreases significantly. moreover, temperature-dependent photoluminescence (t-pl) measurements reveal that antimony irradiation can cause a larger redshift of the pl peak wavelength at all temperatures, a faster decrease of integrated pl intensity below 100 k and a slower decrease of integrated pl intensity within 100-300 k as compared to measurements taken in the absence of antimony irradiation. it was also found that by increasing the amount of antimony irradiation, the samples' behavior is closer to that of conventional qds.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21255]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Yang T,Yang XG,Wang KF. Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy[J]. semiconductor science and technology,2011,26(7):article no.75010.
APA	Yang T,Yang XG,&Wang KF.(2011).Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy.semiconductor science and technology,26(7),article no.75010.
MLA	Yang T,et al."Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy".semiconductor science and technology 26.7(2011):article no.75010.