Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots

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	Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots
	Xu B; Zhou GY; Ye XL; Zhang HY
刊名	journal of applied physics
	2011
卷号	109 期号:9 页码:article no.94311
关键词	SELF-ORGANIZED ISLANDS MOLECULAR-BEAM-EPITAXY OPTICAL-PROPERTIES SURFACES EMISSION DENSITY SIZE
ISSN号	0021-8979
通讯作者	zhou, xl, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. zhouxl06@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	national natural science foundation of china [60625402, 60990313]; 973 program [2006cb604908, 2006cb921607]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	we have introduced ultra-low al composition at the two-dimensional to three-dimensional transition stage of inas/gaas quantum dots (qds) formation. two main effects of alas on the qds are revealed: one is to lower the nucleation barrier so as to reduce the critical nucleation thickness of qds, which is demonstrated by a surface kinetic nucleation model. the other is to facilitate the in atoms migration from wetting layer (wl) to qds, which holds some signatures such as both increased qds density and size with increasing alas composition, as well as the peak energy red-shift of photoluminescence spectra. the enhanced in atoms migration from wl to qds is further confirmed via photo-modulated reflectance experiments and energy band calculation, which both demonstrate the reduction of effective wl thickness after alas insertion. the observed effects of alas on qds formation and growth evolution could be explained by the al-alloying effects of inas wetting layer. (c) 2011 american institute of physics. [doi:10.1063/1.3580258]
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21237]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Xu B,Zhou GY,Ye XL,et al. Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots[J]. journal of applied physics,2011,109(9):article no.94311.
APA	Xu B,Zhou GY,Ye XL,&Zhang HY.(2011).Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots.journal of applied physics,109(9),article no.94311.
MLA	Xu B,et al."Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots".journal of applied physics 109.9(2011):article no.94311.