Band alignment of In2O3/beta-Ga2O3 interface determined by X-ray photoelectron spectroscopy
Wu, Su-Dong; Zhang, David Wei; Ding, Shi-Jin; Sun, Qing-Qing; Xia, Chang-Tai; Horng, Ray-Hua; Yu, Wen-Jie; Zhu, Bao; Ma, Gan; Huan, Ya-Wei
刊名APPLIED PHYSICS LETTERS
2018
卷号113期号:3
关键词In2o3 Indium Films Heterostructures Temperature Valence Offsets Gap
英文摘要The energy band alignment of the atomic-layer-deposited In2O3/beta-Ga2O3((2) over bar 10) interface is evaluated by X-ray photoelectron spectroscopy. The X-ray diffraction pattern reveals that the In2O3 film grown at 160 degrees C is amorphous, while it becomes polycrystalline at a higher deposition temperature of 200 degrees C. The bandgaps, determined by reflection electron energy loss spectroscopy, are 4.65, 3.85, and 3.47 eV for beta-Ga2O3, polycrystalline In2O3, and amorphous In2O3, respectively. Both amorphous and polycrystalline In2O3/beta-Ga2O3 interfaces have Type I alignment. The conduction and valence band offsets at the polycrystalline (amorphous) In2O3/beta-Ga2O3 interface are 0.35 and 0.45 eV (0.39 and 0.79 eV), respectively. These observations suggest that polycrystalline In2O3 as an intermediate semiconductor layer is beneficial to the barrier reduction of metal/Ga2O3 contact. Published by AIP Publishing.
学科主题Chemistry ; Energy & Fuels ; Materials Science
语种英语
公开日期2018-12-04
内容类型期刊论文
源URL[http://ir.nimte.ac.cn/handle/174433/17308]  
专题2018专题
推荐引用方式
GB/T 7714
Wu, Su-Dong,Zhang, David Wei,Ding, Shi-Jin,et al. Band alignment of In2O3/beta-Ga2O3 interface determined by X-ray photoelectron spectroscopy[J]. APPLIED PHYSICS LETTERS,2018,113(3).
APA Wu, Su-Dong.,Zhang, David Wei.,Ding, Shi-Jin.,Sun, Qing-Qing.,Xia, Chang-Tai.,...&Sun, Shun-Ming.(2018).Band alignment of In2O3/beta-Ga2O3 interface determined by X-ray photoelectron spectroscopy.APPLIED PHYSICS LETTERS,113(3).
MLA Wu, Su-Dong,et al."Band alignment of In2O3/beta-Ga2O3 interface determined by X-ray photoelectron spectroscopy".APPLIED PHYSICS LETTERS 113.3(2018).
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