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	Activity Dependent Synaptic Plasticity Mimicked on Indium-Tin-Oxide Electric-Double-Layer Transistor
	Wen, Juan; Zhu, Li Qiang; Fu, Yang Ming; Xiao, Hui; Guo, Li Qiang; Wan, Qing
刊名	ACS APPLIED MATERIALS & INTERFACES
	2017
卷号	9期号:42页码:37064-37069
ISSN号	1944-8244
英文摘要	Ion coupling has provided an additional method to modulate electric properties for solid-state materials. Here, phosphorosilicate glass (PSG)-based electrolyte gated protonic/electronic coupled indium-tin-oxide electric-double-layer (EDL) transistors are fabricated. The oxide transistor exhibits good electrical performances due to an extremely strong proton gating behavior for the electrolyte. With interfacial electrochemical doping, channel conductances of the oxide EDL transistor can be regulated to different levels, corresponding to different initial synaptic weights. Thus, activity dependent synaptic responses such as excitatory postsynaptic current, paired-pulse facilitation, and high-pass filtering are discussed in detail. The proposed proton conductor gated oxide EDL synaptic transistors with activity dependent synaptic plasticities may act as fundamental building blocks for neuromorphic system applications.
公开日期	2017-12-25
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/13567]
专题	2017专题
推荐引用方式 GB/T 7714	Wen, Juan,Zhu, Li Qiang,Fu, Yang Ming,et al. Activity Dependent Synaptic Plasticity Mimicked on Indium-Tin-Oxide Electric-Double-Layer Transistor[J]. ACS APPLIED MATERIALS & INTERFACES,2017,9(42):37064-37069.
APA	Wen, Juan,Zhu, Li Qiang,Fu, Yang Ming,Xiao, Hui,Guo, Li Qiang,&Wan, Qing.(2017).Activity Dependent Synaptic Plasticity Mimicked on Indium-Tin-Oxide Electric-Double-Layer Transistor.ACS APPLIED MATERIALS & INTERFACES,9(42),37064-37069.
MLA	Wen, Juan,et al."Activity Dependent Synaptic Plasticity Mimicked on Indium-Tin-Oxide Electric-Double-Layer Transistor".ACS APPLIED MATERIALS & INTERFACES 9.42(2017):37064-37069.

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