BAND DISPERSION IN THE RECURSION METHOD

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	BAND DISPERSION IN THE RECURSION METHOD
	WANG YL
刊名	physical review b
	1991
卷号	43 期号:15 页码:12464-12469
关键词	ELECTRONIC-STRUCTURE SEMICONDUCTORS SILICON DISLOCATIONS ENVIRONMENT DEFECTS STATES
ISSN号	0163-1829
通讯作者	wang yl chinese acad sciinst semicondpob 912beijing 100083peoples r china
中文摘要	the advantages of the supercell model in employing the recursion method are discussed in comparison with the cluster model. a transformation for changing complex bloch-sum seed states to real seed states in recursion calculations is presented and band dispersion in the recursion method is extracted with use of the lanczos algorithm. the method is illustrated by the band structure of gaas in the empirical tight-binding parametrized model. in the supercell model, the treatment of boundary conditions is discussed for various seed-state choices. the method is useful in applying tight-binding techniques to systems with substantial deviations from periodicity.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14309]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	WANG YL. BAND DISPERSION IN THE RECURSION METHOD[J]. physical review b,1991,43(15):12464-12469.
APA	WANG YL.(1991).BAND DISPERSION IN THE RECURSION METHOD.physical review b,43(15),12464-12469.
MLA	WANG YL."BAND DISPERSION IN THE RECURSION METHOD".physical review b 43.15(1991):12464-12469.